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2SC4518_01

更新时间: 2024-09-20 12:20:31
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管
页数 文件大小 规格书
1页 32K
描述
Silicon NPN Triple Diffused Planar Transistor

2SC4518_01 数据手册

  
2 S C4 5 1 8 /4 5 1 8 A  
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)  
Application : Switching Regulator, Lighting Inverter and General Purpose  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
External Dimensions FM20(TO220F)  
Ratings  
2SC4518 2SC4518A  
900 1000  
Ratings  
Symbol  
Unit  
Symbol  
Conditions  
Unit  
±0.2  
4.2  
2SC4518 2SC4518A  
100max  
100max  
550min  
±0.2  
10.1  
c
0.5  
2.8  
VCBO  
VCEO  
VEBO  
IC  
V
V
ICBO  
VCB=800V  
VEB=7V  
µA  
µA  
V
550  
7
IEBO  
V
V(BR)CEO  
hFE  
IC=10mA  
±0.2  
ø3.3  
a
b
5(Pulse10)  
2.5  
A
VCE=4V, IC=1.8A  
IC=1.8A, IB=0.36A  
IC=1.8A, IB=0.36A  
VCE=12V, IE=0.35A  
VCB=10V, f=1MHz  
10 to 25  
0.5max  
IB  
A
VCE(sat)  
VBE(sat)  
fT  
V
V
PC  
35(Tc=25°C)  
150  
W
°C  
°C  
1.2max  
±0.15  
1.35  
Tj  
6typ  
MHz  
pF  
±0.15  
1.35  
Tstg  
–55 to +150  
COB  
50typ  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Part No.  
VBB2  
(V)  
IB1  
(A)  
ton  
(µs)  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
IB2  
(A)  
tstg  
(µs)  
tf  
(µs)  
B
C E  
b. Lot No.  
250  
139  
1.8  
10  
–5  
0.27  
–0.9  
0.7max  
4max  
0.5max  
IC VCE Characteristics (Typical)  
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
5
5
1.5  
IC/IB=5 Const.  
4
3
2
1
4
3
1.0  
VBE(sat)  
2
1
0
0.5  
IB=50mA  
VCE(sat)  
0
0.03 0.05 0.1  
0
0
1
2
3
4
0.5  
1
5
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Collector-Emitter Voltage VCE(V)  
Base-Emittor Voltage VBE(V)  
Collector Current IC(A)  
hFE IC Temperature Characteristics (Typical)  
tontstgtf IC Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
4
1
7
5
50  
125˚C  
25˚C  
tstg  
VCC 250V  
IC:IB1:IB2=1:0.15:–0.5  
1
–55˚C  
tf  
0.5  
10  
0.5  
0.3  
ton  
0.1  
0.2  
5
1
10  
100  
1000  
0.5  
1
5
0.02  
0.05  
0.1  
0.5  
1
5
Collector Current IC(A)  
Time t(ms)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
Reverse Bias Safe Operating Area  
Pc Ta Derating  
20  
10  
5
35  
30  
20  
10  
5
20  
10  
1
1
0.5  
0.5  
Without Heatsink  
Natural Cooling  
L=3mH  
IB2=–1.0A  
Duty:less than 1%  
Without Heatsink  
Natural Cooling  
0.1  
0.1  
Without Heatsink  
0.05  
0.03  
0.05  
0.03  
10  
2SC4518A  
1000  
2SC4518  
2
0
50  
100  
500 1000  
50  
100  
500  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
114  

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