Datasheet > 2SC4497

2SC4497

更新时间： 2024-09-20 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	97K
描述
High voltage. Low saturation voltage. Small collector output capacitance.

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中文翻译

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数据手册

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2SC4497 数据手册

SMD Type

Transistors

Product specification

2SC4497

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High voltage.

Low saturation voltage.

Small collector output capacitance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

300

Unit

300

100

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

V^CB= 300 V, I^E= 0

V^EB= 6 V, I^C= 0

Emitter cut-off current

I^EBO

0.1

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V^(BR)CBOI^C= 0.1 mA, I^E= 0

V^(BR)CEOI^C= 1 mA, I^B= 0

300

V^CE= 10 V, I^C= 20 mA

h^FE

V^CE= 10 V, I^C= 1mA

150

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^{CE (sat)}I^C= 20 mA, I^B= 2 mA

V^{BE (sat)}I^C= 20 mA, I^B= 2 mA

0.5

1.2

f^T

V^CE= 10 V, I^C= 10 mA

MHz

Collector output capacitance

C^ob

V^CB= 20 V, I^E= 0, f = 1 MHz

hFE Classification

Marking

Rank

hFE

30 90

50 150

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