Datasheet > 2SC4495_01

2SC4495_01

更新时间： 2024-09-20 07:30:59

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	27K
描述
Silicon NPN Triple Diffused Planar Transistor

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中文翻译

获取价格

数据手册

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2SC4495_01 数据手册

Hig h h FE

LOW VCE (s a t )

2 S C4 4 9 5

Silicon NPN Triple Diffused Planar Transistor

Application : Audio Temperature Compensation and General Purpose

■

Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

External Dimensions FM20(TO220F)

Ratings

Symbol

I^CBO

Ratings

10max

50min

Symbol

V^CBO

VCEO

VEBO

Conditions

Unit

µA

±0.2

4.2

±0.2

10.1

0.5

2.8

V^CB=80V

IEBO

V^EB=6V

V(BR)CEO

hFE

I^C=25mA

±0.2

ø3.3

500min

0.5max

40typ

V^CE=4V, IC=0.5A

I^C=1A, IB=20mA

V^CE=12V, IE=–0.1A

V^CB=10V,f=1MHz

VCE(sat)

MHz

25(Tc=25°C)

150

°C

±0.15

1.35

COB

30typ

±0.15

1.35

Tstg

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

R^L

I^C

VBB1

V^BB2

(V)

IB1

I^B2

ton

tstg

Weight : Approx 2.0g

a. Part No.

b. Lot No.

V^CC

(V)

(Ω)

(A)

(V)

(mA)

(µs)

C E

–5

–30

0.45typ

1.60typ

0.85typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

1.5

2.5

1.5

2mA

0.5

1mA

I^B=0.5mA

0.5

I^C=1A

100

1000

0.5

1.5

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

3000

5000

125˚C

25˚C

Typ

–55˚C

1000

500

1000

500

100

0.01

100

Time t(ms)

1000 2000

0.1

0.5

0.1

0.5

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

Natural Cooling

Silicone Grease

Heatsink: Aluminum

in mm

Typ

150x150x2

100x

0.5

Without Heatsink

Natural Cooling

50x50x2

0.1

Without Heatsink

–0.005 –0.01

0.05

–0.1

Emitter Current IE(A)

–1

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

110

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