Datasheet > 2SC4466_01

2SC4466_01

更新时间： 2024-09-27 07:30:59

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	27K
描述
Silicon NPN Triple Diffused Planar Transistor

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中文翻译

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数据手册

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2SC4466_01 数据手册

2 S C4 4 6 6

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)

Application : Audio and General Purpose

External Dimensions MT-100(TO3P)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Symbol

Ratings

10max

80min

Conditions

Unit

µA

Unit

±0.2

4.8

±0.4

15.6

I^CBO

±0.1

V^CBO

VCEO

VEBO

120

V^CB=120V

2.0

9.6

IEBO

V^EB=6V

V(BR)CEO

hFE

I^C=50mA

±0.1

ø3.2

50min

V^CE=4V, IC=2A

I^C=2A, IB=0.2A

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

VCE(sat)

1.5max

20typ

MHz

60(Tc=25°C)

150

°C

COB

110typ

+0.2

-0.1

+0.2

-0.1

Tstg

–55 to +150

hFE Rank O(50 to100), P(70 to140), Y(90 to180)

1.05

0.65

1.4

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

VCC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

IB1

(A)

I^B2

(A)

tstg

(µs)

Weight : Approx 6.0g

a. Part No.

ton

(µs)

b. Lot No.

–5

0.3

–0.3

2.60typ

0.34typ

0.16typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

30mA

20mA

I^B=10mA

IC=6A

0.5

Base Current I^B(A)

1.0

1.5

Collector-Emitter Voltage V^CE(V)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

300

100

200

125˚C

100

25˚C

Typ

–30˚C

0.5

0.3

0.02

100

Time t(ms)

1000 2000

0.1

0.5

5 6

0.02

0.1

0.5

5 6

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

1ms

10ms

Typ

0.5

Without Heatsink

Natural Cooling

Without Heatsink

3.5

0.1

–0.02

–0.1

–1

–6

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

107

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