Datasheet > 2SC4442

2SC4442

更新时间： 2024-09-21 07:30:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	94K
描述
isc Silicon NPN Power Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SC4442 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SC4442 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4442

DESCRIPTION

·Collector-Base Breakdown Voltage-

: V_(BR)CBO= 500V(Min.)

·Wide Area of Safe Operation

·High Speed Switching

APPLICATIONS

·Designed for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

500

400

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

1.6

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

T_j

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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