Datasheet > 2SC4432-RT4

2SC4432-RT4

更新时间： 2024-11-11 01:11:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	978K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC4432-RT4 数据手册

SMD Type

Transistors

NPN Transistors

2SC4432

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High power gain.

● High cutoff frequency.

● Complementary to 2SA1815

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

250

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 30V , I = 0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.2

1.2

270

EB= 2V , I

=10mA, I

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=1mA

C=10mA, I

=1mA

hFE

^CE= 10V, I

= 5 mA

= 10mA,f=100MHz

CE= 10V, IC= 5 mA,f=31.9 MHz

Power Gain

CE= 10V, I

Base-to-Collector Time Constant

Reverse Transfer Capacitance

Collector output capacitance

Transition frequency

rbb’CC

Cre

CB= 10V,f=1MHz

^CB= 10V,f=1MHz

0.45

0.7

1.2

^CE= 10V, I

C= 5mA

750

MHz

■ Classification of hfe

Type

2SC4432-RT3 2SC4432-RT4 2SC4432-RT5

Range

60-120

RT3

90-180

RT4

135-270

RT5

Marking

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