SMD Type
Transistors
NPN Transistors
2SC4432-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High power gain.
● High cutoff frequency.
● Complementary to 2SA1815-HF
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
40
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
18
3
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
50
mA
P
C
250
150
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 1 mA, I = 0
= 100μA, I = 0
CB= 30V , I = 0
=0
Min
40
18
3
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.2
1.2
270
uA
V
I
EB= 2V , I
=10mA, I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
C
B
B
=1mA
V
I
C=10mA, I
=1mA
hFE
V
V
CE= 10V, I
C
= 5 mA
= 10mA,f=100MHz
CE= 10V, IC= 5 mA,f=31.9 MHz
60
Power Gain
PG
CE= 10V, I
C
28
dB
ps
V
Base-to-Collector Time Constant
Reverse Transfer Capacitance
Collector output capacitance
Transition frequency
rbb’CC
23
Cre
V
V
V
CB= 10V,f=1MHz
CB= 10V,f=1MHz
0.45
0.7
pF
C
ob
T
1.2
f
CE= 10V, I
C= 5mA
750
MHz
■ Classification of hfe
Type
Range
Marking
2SC4432-RT3-HF 2SC4432-RT4-HF 2SC4432-RT5-HF
40-80 60-120 160-320
RT3 RT4 RT5
F
F
F
1
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