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2SC4427 PDF预览

2SC4427

更新时间: 2024-11-18 06:20:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 238K
描述
isc Silicon NPN Power Transistor

2SC4427 数据手册

 浏览型号2SC4427的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4427  
DESCRIPTION  
·High Breakdown Voltage-  
: V(BR)CEO= 800V(Min)  
·Fast Switching speed  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for switching regulator Applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1100  
800  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Pulse  
Base Current-Continuous  
4.5  
A
ICP  
15  
A
IB  
2
A
Collector Power Dissipation  
@ TC=25℃  
50  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
3
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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