2 S C4 3 8 8
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673)
Application : Audio and General Purpose
(Ta=25°C)
External Dimensions FM100(TO3PF)
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
Symbol
ICBO
Conditions
VCB=200V
Ratings
10max
10max
180min
50min
Symbol
VCBO
VCEO
VEBO
IC
Unit
µA
µA
V
Ratings
Unit
±0.2
5.5
±0.2
15.6
±0.2
3.45
200
V
IEBO
VEB=6V
180
V
V(BR)CEO
hFE
IC=50mA
6
V
±0.2
ø3.3
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
15
4
A
a
b
VCE(sat)
fT
2.0max
20typ
IB
V
MHz
pF
A
PC
85(Tc=25°C)
150
W
°C
°C
1.75
0.8
COB
300typ
Tj
2.15
+0.2
Tstg
–55 to +150
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05
-0.1
+0.2
±0.1
1.5
±0.1
0.65
-0.1
5.45
5.45
1.5
3.35
■Typical Switching Characteristics (Common Emitter)
4.4
C
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
tstg
(µs)
tf
(µs)
Weight : Approx 6.5g
a. Part No.
b. Lot No.
ton
(µs)
B
E
40
4
10
10
–5
1
1.8max
0.6max
–1
0.5max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
15
15
10
3
10
2
1
5
50mA
5
0
IB=20mA
IC=10A
5A
0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
300
200
125˚C
100
1
Typ
25˚C
100
50
0.5
50
–30˚C
20
0.02
20
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 15
0.1
0.5
1
5
10 15
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
30
20
40
100
80
Typ
10
5
60
1
40
0.5
10
Without Heatsink
Natural Cooling
20
0.1
Without Heatsink
3.5
0
0
–0.02
0.05
–0.1
–1
Emitter Current IE(A)
–10
3
5
10
50
100
200
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
103