2SC4381

更新时间： 2024-02-04 06:46:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	215K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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2SC4381 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4381

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 150V(Min)

·DC Current Gain-

: h_FE= 60(Min)@ (V_CE= 10V, I_C= 0.7A)

·Complement to Type 2SA1667

APPLICATIONS

·Designed for TV vertical output ,audio output driver and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

150

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@T_C=25℃

P_C

℃

Junction Temperature

Storage Temperature

150

T_J

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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