Datasheet > 2SC4379U

2SC4379U

更新时间： 2024-11-25 14:55:35

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	812K
描述
功率三极管

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数据手册

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2SC4379U 数据手册

2SC4379U

NPN Silicon Epitaxial Planar Power Transistor

Applications

• For power amplification applications

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Base Current

I_B

0.4

0.5 ¹⁾

1 ²⁾

P_tot

Total Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250 ¹⁾

125 ²⁾

Unit

Thermal Resistance from Junction to Ambient

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

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Dated: 16/05/2023 Rev: 07

12 3 4 5

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