JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC4373
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
z
z
Small Flat Package
Large Current Capacity
3. EMITTER
MARKING
CO
CY
80–160
120–240
Solid dot = Green molding compound device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
120
Unit
V
Collector-Emitter Voltage
120
V
Emitter-Base Voltage
5
V
Collector Current
800
mA
mW
℃/W
℃
PC
Collector Power Dissipation
500
RθJA
TJ,Tstg
Thermal Resistance From Junction To Ambient
Operation Junction and Storage Temperature Range
250
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=1mA,IE=0
Min
120
120
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=120V,IE=0
0.1
0.1
240
1
µA
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=5V, IC=100mA
IC=500mA,IB=50mA
VCE=5V, IC=500mA
VCE=5V,IC=500mA
VCB=10V, IE=0, f=1MHz
80
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
fT
120
MHz
pF
Transition frequency
Collector output capacitance
Cob
30
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
80–160
120–240
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1
Rev. - 2.2