是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.82 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.04 A |
基于收集器的最大容量: | 0.9 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4322 | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
2SC4322TE85L | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal | |
2SC4322TE85R | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal | |
2SC4324 | TOSHIBA |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
2SC4324TE85L | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4324TE85R | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4325 | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
2SC4325TE85L | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4325TE85R | TOSHIBA |
获取价格 |
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC4326KT146S | ROHM |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |