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2SC4321TE85R PDF预览

2SC4321TE85R

更新时间: 2024-11-02 21:19:11
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 177K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC4321TE85R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
其他特性:LOW NOISE最大集电极电流 (IC):0.04 A
基于收集器的最大容量:0.9 pF集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):10000 MHz
Base Number Matches:1

2SC4321TE85R 数据手册

 浏览型号2SC4321TE85R的Datasheet PDF文件第2页浏览型号2SC4321TE85R的Datasheet PDF文件第3页浏览型号2SC4321TE85R的Datasheet PDF文件第4页浏览型号2SC4321TE85R的Datasheet PDF文件第5页 

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