Datasheet > 2SC4242

2SC4242

更新时间： 2024-11-16 07:30:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	99K
描述
isc Silicon NPN Power Transistor

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2SC4242 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4242

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)

·Fast Switching Speed

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 0.8V(Max.)@ I_C= 4.0A

APPLICATIONS

·Designed for use in high-voltage, high-speed , power

switching in inductive circuit , they are particularly suited

for 115 and 220V switchmode applications such as swit-

ching regulator’s, inverters, DC-DC converter.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

450

400

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

3.125 ℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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