2SC4186

更新时间： 2024-11-19 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		振荡器晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	49K
描述
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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中文翻译

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技术参数
数据手册

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2SC4186 技术参数

生命周期：	Obsolete	包装说明：	MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.64
Is Samacsys：	N	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	1.8 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4000 MHz
Base Number Matches：	1

2SC4186 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4186

UHF OSCILLATOR AND UHF MIXER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4186 is an NPN silicon epitaxial transistor intended for use

as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

features stable oscillation and small frequency drift against any change

of the supply voltage and the ambient temperature.

in millimeters

2.1 ± 0.1

1.25 ± 0.1

It is designed for use in small type equipments especially recom-

mended for Hybrid Integrated Circuit and other applications.

FEATURES

•

High Gain Bandwidth Product

Low Collector to Base Time Constant: C^C· rb’b = 4.0 ps TYP.

Low Output Capacitance : Cob = 1.5 pF MAX.

: fT = 4.0 GHz.

Marking

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

VCB0

V^CE0

V^EB0

I^C

P^T

T^j

3.0

160

˚C

PIN CONNECTIONS

1. Emitter

2. Base

150

T^stg

–65 to +150

˚C

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

Characteristics

Collector Cutoff Current

DC Current Gain

Symbol

ICB0

MIN.

TYP.

MAX.

Unit

Test Conditions

0.1

200

0.5

µA

VCB = 15 V, IE = 0

hFE

100

0.09

4.0

VCE = 10 V, IC = 5 mA

Collector Saturation Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)

GHz

IC = 10 mA, IB = 1.0 mA

2.5

VCE = 10 V, IC = 5 mA, f = 1 GHz

VCB = 10 V, IE = 0, f = 1 MHz

Cob

1.0

1.8

5.0

Collector to Base Time Constant

Cc · rb’b

CE = 10 V, I

= –5 mA, f = 31.9 MHz

hFE Classifications

Rank

Marking

hFE

T62

T63

T64

T63

40 to 80

60 to 120

100 to 200

Document No. P11191EJ2V0DS00 (2nd edition)

Date Published February 1996 P

Printed in Japan

1996

12 3 4 5 6 7 8

中文翻译

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与2SC4186相关器件

型号	品牌	获取价格	描述	数据表
2SC4186-T1T62	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186-T1T63	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186-T2T62	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186-T2T64	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186T62	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-323
2SC4186-T62	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186T63	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-323
2SC4186-T63	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4186T64	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-323
2SC4186-T64	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili

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