Datasheet > 2SC4177

2SC4177

更新时间： 2023-12-06 20:11:50

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	764K
描述
SOT-323

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数据手册

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2SC4177 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SC4177 TRANSISTOR (NPN)

FEATURES

SOT–323

 High DC Current Gain

 Complementary to 2SA1611

 High Voltage

APPLICATIONS

 General Purpose Amplification

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

150

833

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=60V, I_E=0

100

600

0.3

V_EB=5V, I_C=0

Emitter cut-off current

h_FE*

V_CE(sat)

V_BE(sat)

V_BE

V_CE=6V, I_C=1mA

I_C=100mA, I_B=10mA

V_CE=6V, I_C=1mA

V_CE=6V, I_C=10mA

V_CB=6V, I_E=0, f=1MHz

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.55

0.65

f_T

250

MHz

Transition frequency

C_ob

Collector output capacitance

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE

RANK

90–180

135–270

300–600

RANGE

200–400

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3 4

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