SMD Type
Transistors
NPN Transistors
2SC4168
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Fast switching speed.
● High gain-bandwidth product.
● Low saturation voltage.
● Complementary to 2SA1607.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
40
Unit
V
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
VCBO
VCEO
VEBO
20
5
Collector Current - Continuous
Peak Collector Current
I
C
150
300
200
150
mA
mW
℃
I
CP
Collector Power Dissipation
Junction Temperature
PC
T
J
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 1 mA, RBE= ∞
= 100μA, I = 0
CB= 30 V , I = 0
EB= 4V , I =0
= 10 mA, I = 1mA
= 10 mA, I = 1mA
CE= 1V, I = 10mA
Min
40
20
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
V
V
CBO
E
CEO
EBO
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.2
1
uA
V
I
C
V
CE(sat)
BE(sat)
I
I
C
B
0.08
0.72
V
C
B
h
FE
V
C
60
270
20
Delay time
td
11
10
Rise time
t
r
20
See specified Test Circuit
ns
Storage time
t
s
70
180
25
Fall time
t
f
15
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, f=1MHz
2.6
700
pF
f
CE= 10V, I
C= 10mA
MHz
■ Classification of hfe
Type
Range
Marking
2SC4168-GT3 2SC4168-GT4 2SC4168-GT5
60-120
GT3
90-180
GT4
135-270
GT5
1
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