Datasheet > 2SC4135

2SC4135

更新时间： 2024-09-20 12:32:55

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	134K
描述
High breakdown voltage and large current capacity. Fast switching speed.

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数据手册

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2SC4135 数据手册

SSMMDD TTyyppee

Product specification

2SC4135

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

High breakdown voltage and large current capacity.

Fast switching speed.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

100

Collector current (pulse)

Collector dissipation

I^CP

P^C

150

Jumction temperature

Storage temperature

T^j

T^stg

-55 to +150

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与2SC4135相关器件

型号	品牌	获取价格	描述	数据表
2SC4135R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-252
2SC4135RTP	ONSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PI
2SC4135S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-252
2SC4135S(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR
2SC4135S-E	ONSEMI	获取价格	Bipolar Transistor
2SC4135S-TL-E	ONSEMI	获取价格	Bipolar Transistor
2SC4135STP-FA	ONSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4
2SC4135T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-252
2SC4135T(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR
2SC4135T(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-252VAR