生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 2.1 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 0.1 W |
最大功率耗散 (Abs): | 0.1 W | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4117L | TOSHIBA |
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TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | |
2SC4117TE85R | TOSHIBA |
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TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SC4118 | TYSEMI |
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Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) | |
2SC4118 | TOSHIBA |
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NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING SPPLICATI | |
2SC4118 | KEXIN |
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Silicon NPN Epitaxial | |
2SC4118_07 | TOSHIBA |
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Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications | |
2SC4118-GR | TOSHIBA |
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TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, USM, SC-70, 3 PIN, BIP | |
2SC4118-GR(TE85L,F | TOSHIBA |
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Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC4118O | ETC |
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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SC-70 | |
2SC4118-O(TE85L) | TOSHIBA |
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2SC4118-O(TE85L) |