Datasheet > 2SC4116

2SC4116

更新时间： 2023-12-06 20:09:14

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	739K
描述
SOT-323

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中文翻译

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数据手册

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2SC4116 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SC4116 TRANSISTOR (NPN)

FEATURES

High voltage and high current

1. BASE

Excellent h_FElinearity

High h_FE

2. EMITTER

3. COLLECTOR

Low noise

Complementary to 2SA1586

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

150

100

1250

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100μA,I_E=0

I_C=1mA,I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100μA,I_C=0

V_CB=60V,I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=6V,I_C=2mA

I_C=100mA,I_B=10mA

V_CE=10V,I_C=1mA,

700

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

V_CE=6V,I_c=0.1mA,

f=1KH_Z,Rg=10KΩ

3.5

Noise figure

CLASSIFICATION OF h_FE

Rank

70-140

120-240

Range

Marking

200-400

350-700

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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