2SC4008

更新时间： 2024-01-20 22:32:45

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	101K
描述
isc Silicon NPN Power Transistor

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技术参数
数据手册

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2SC4008 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SC4008 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4008

DESCRIPTION

·Low Collector Saturation Voltage

: V_CE(sat)= 1.0V(Max)@ I_C= 2A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 80V (Min)

·Wide Area of Safe Operation

·Complement to Type 2SA1635

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

100

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

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2SC4008/D	ROHM	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti	获取价格
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2SC4008/DF	ROHM	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti	获取价格
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2SC4008/EF	ROHM	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti	获取价格