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2SC4007/G PDF预览

2SC4007/G

更新时间: 2024-11-14 13:00:19
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 92K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2SC4007/G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:40 W
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
VCEsat-Max:1 VBase Number Matches:1

2SC4007/G 数据手册

 浏览型号2SC4007/G的Datasheet PDF文件第2页 

与2SC4007/G相关器件

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2SC4007C7/D ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC4007C7/E ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC4007C7/FG ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC4007C7/G ROHM

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC4007C7E ROHM

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4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
2SC4007D ROHM

获取价格

4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
2SC4007E ROHM

获取价格

暂无描述
2SC4007F ROHM

获取价格

4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
2SC4007G ROHM

获取价格

4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN