Datasheet > 2SC4002

2SC4002

更新时间： 2024-11-15 14:53:15

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	20K
描述
小信号晶体管

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2SC4002 数据手册

2SC4002

NPN Silicon Epitaxial Planar Transistor

for High-Voltage Driver Applications.

The transistor is subdivided into two groups, D

and E, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

400

200

Collector Current

Collector Current (Pulse)

Power Dissipation

I_CP

400

P_tot

600

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 10 V, I_C= 50 mA

Current Gain Group

h_FE

100

120

200

Collector Base Cutoff Current

at V_CB= 300 V

Emitter Base Cutoff Current

at V_EB= 4 V

Collector Emitter Saturation Voltage

at I_C= 50 mA, I_B= 5 mA

Base Emitter Saturation Voltage

at I_C= 50 mA, I_B= 5 mA

Gain Bandwidth Product

at V_CE= 30 V, I_C= 10 mA

I_CBO

I_EBO

0.1

0.6

1.0

µA

V_CE(sat)

V_BE(sat)

f_T

MHz

Dated :20/08/2016 Rev: 01

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与2SC4002相关器件

型号	品牌	获取价格	描述	数据表
2SC4002D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 200MA I(C) \| TO-92
2SC4002E	ROCHESTER	获取价格	200mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN
2SC4002-E	ROCHESTER	获取价格	200mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, NP, 3 PIN
2SC4003	TYSEMI	获取价格	High breakdown voltage Adoption of MBIT process Excellent hFE linearity
2SC4003	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC4003	TRSYS	获取价格	Plastic-Encapsulated Transistors
2SC4003	SANYO	获取价格	High-Voltage Driver Applications
2SC4003	KEXIN	获取价格	NPN Triple Diffused Planar Silicon Transistor
2SC4003	CJ	获取价格	TO-252-2L
2SC4003	LGE	获取价格	双极型晶体管