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2SC4002 PDF预览

2SC4002

更新时间: 2023-12-06 20:02:41
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
1页 20K
描述
小信号晶体管

2SC4002 数据手册

  
2SC4002  
NPN Silicon Epitaxial Planar Transistor  
for High-Voltage Driver Applications.  
The transistor is subdivided into two groups, D  
and E, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
400  
V
V
400  
5
200  
V
Collector Current  
mA  
mA  
mW  
Collector Current (Pulse)  
Power Dissipation  
ICP  
400  
Ptot  
600  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 10 V, IC = 50 mA  
Current Gain Group  
D
E
hFE  
hFE  
60  
100  
-
-
120  
200  
-
-
Collector Base Cutoff Current  
at VCB = 300 V  
Emitter Base Cutoff Current  
at VEB = 4 V  
Collector Emitter Saturation Voltage  
at IC = 50 mA, IB = 5 mA  
Base Emitter Saturation Voltage  
at IC = 50 mA, IB = 5 mA  
Gain Bandwidth Product  
at VCE = 30 V, IC = 10 mA  
ICBO  
IEBO  
-
-
-
-
-
-
-
0.1  
0.1  
0.6  
1.0  
-
µA  
µA  
V
VCE(sat)  
VBE(sat)  
fT  
-
-
V
70  
MHz  
®
Dated :20/08/2016 Rev: 01  

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