Datasheet > 2SC3998

2SC3998

更新时间： 2024-11-14 12:57:31

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页数	文件大小	规格书
3页	371K
描述
250 Watt NPN Triple Diffused Planar Silicon Transistor

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中文翻译

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2SC3998 数据手册

2SC3998

Pb Free Plating Product

250 Watt NPN Triple Diffused Planar Silicon Transistor

DESCRIPTION

· High speed (t =100ns typ).

· High breakdown voltage (V

=1500V).

CBO

· High reliability (adoption of HVP process).

· Adoption of MBIT process.

Collector

Base

PINNING

Emitter

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PL) and symbol

Emitter

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

1500

800

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

250

150

˚C

Tc=25˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=1500V

CES

Collector-to-Emitter Sastain Voltage

Emitter Cutoff Current

=100mA, I =0

800

CEO(sus)

=4V, I =0

=800V, I =0

1.0

µA

EBO

Collector Cutoff Current

CBO

=5V, I =1.0A

=5V, I =20A

DC Current Gain

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Storage Time

=20A, I =5A

CE(sat)

BE(sat)

=20A, I =5A

1.5

3.0

0.2

=12A, I =2.4A, I =–4.8A

B1 B2

=12A, I =2.4A, I =–4.8A

B1 B2

µs

stg

Fall Time

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Rev.07C

http://www.thinkisemi.com/

12 3

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