2SC3930

更新时间： 2024-01-20 16:16:45

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
3页	55K
描述
Silicon NPN epitaxial planer type(For high-frequency amplification)

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技术参数
数据手册

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2SC3930 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Base Number Matches：	1

2SC3930 数据手册

Transistor

2SC3930

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA1532

Unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking symbol : V

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

Collector cutoff current

Forward current transfer ratio

Transition frequency

Noise figure

V_CB= 10V, I_E= 0

µA

h_FE

f_T

V_CB= 10V, I_E= –1mA

220

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CB= 10V, I_E= –1mA, f = 5MHz

V_CB= 10V, I_E= –1mA, f = 2MHz

V_CE= 10V, I_C= 1mA, f = 10.7MHz

150

250

2.8

MHz

Ω

Z_rb

Reverse transfer impedance

1.5

Common emitter reverse transfer capacitance C_re

0.9

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

Marking Symbol

12 3

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