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2SC3910 PDF预览

2SC3910

更新时间: 2024-09-25 05:56:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 217K
描述
isc Silicon NPN Power Transistor

2SC3910 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SC3910 数据手册

 浏览型号2SC3910的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3910  
DESCRIPTION  
·High Speed Switching  
·High Collector-Base Breakdown Voltage-  
: V(BR)CEO= 800V(Min)  
·Good Linearity of hFE  
APPLICATIONS  
·Designed for high speed switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
800  
500  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
15  
A
ICM  
30  
A
IB  
5
A
Collector Power Dissipation  
@ TC=25℃  
150  
3.5  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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