Datasheet > 2SC3857_07

2SC3857_07

更新时间： 2024-09-15 07:30:47

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	29K
描述
Silicon NPN Triple Diffused Planar Transistor

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数据手册

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2SC3857_07 数据手册

2 S C3 8 5 7

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493)

Application : Audio and General Purpose

External Dimensions MT-200

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Symbol

I^CBO

Conditions

Ratings

100max

200min

50min

Symbol

Ratings

Unit

µA

Unit

±0.2

6.0

±0.3

36.4

V^CB=200V

V^CBO

VCEO

VEBO

200

±0.2

24.4

2.1

±0.1

2-ø3.2

IEBO

V^EB=6V

200

V(BR)CEO

hFE

I^C=50mA

V^CE=4V, IC=5A

I^C=10A, IB=1A

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

MHz

VCE(sat)

3.0max

20typ

150(Tc=25°C)

150

°C

COB

250typ

+0.2

-0.1

0.65

+0.2

-0.1

1.05

Tstg

h^FERank O(50 to 100), P(70 to 140), Y(90 to 180)

–55 to +150

+0.3

-0.1

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 18.4g

a. Part No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

ton

(µs)

tstg

(µs)

b. Lot No.

–5

0.5

–0.5

0.3typ

2.4typ

0.4typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(V^CE=4V)

IC=15A

10A

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage VBE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

300

125˚C

Typ

0.5

100

25˚C

100

–30˚C

0.02

0.1

0.5

10 15

100

Time t(ms)

1000 2000

0.1

0.5

10 15

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

160

10ms

120

Typ

0.5

Without Heatsink

Natural Cooling

Without Heatsink

0.1

100

300

–0.02

–0.1

–1

Emitter Current I^E(A)

–10

100

125

150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

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