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2SC3838Q-G PDF预览

2SC3838Q-G

更新时间: 2024-11-18 12:59:11
品牌 Logo 应用领域
WEITRON 晶体放大器晶体管
页数 文件大小 规格书
3页 583K
描述
Transistor

2SC3838Q-G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SC3838Q-G 数据手册

 浏览型号2SC3838Q-G的Datasheet PDF文件第2页浏览型号2SC3838Q-G的Datasheet PDF文件第3页 
2SC3838  
COLLECTOR  
3
High-Frequency Amplifier Transistor  
NPN Silicon  
3
1
1
P b  
Lead(Pb)-Free  
2
BASE  
2
SOT-23  
EMITTER  
MAXIMUM RATINGS (Ta=25ºC)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Symbol  
Value  
11  
20  
3.0  
50  
Unit  
V
V
V
mA  
V
V
V
CEO  
CBO  
EBO  
I
C
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Value  
Unit  
Total Device Dissipation FR-5 Board(1)  
TA =25°C  
mW  
P
150  
D
R
°C/W  
°C  
Thermal Resistance, Junction Ambient  
Junction and Storage, Temperature  
θJA  
625  
T
Tstg  
-55 to +150  
J,  
Device Marking  
2SC3838=AD  
ELECTRICAL CHARACTERISTICS  
Max  
Characteristics  
Symbol  
Min  
Unit  
-
Collector-Emitter Breakdown Voltage(I =1mA, I =0)  
V
11  
V
V
V
C
B
(BR)CEO  
-
-
20  
Collector-Base Breakdown Voltage(I =10µA, I =0)  
V
V
C
E
(BR)CBO  
Emitter-Base Breakdown Voltage(I =10µA, I =0)  
3.0  
(BR)EBO  
C
E
-
-
I
µA  
µA  
0.5  
0.5  
Collector Cufoꢀ Current(V =10V, I =0)  
CBO  
CB  
E
I
EBO  
Emitter Cufoꢀ Current(V =2V, I =0)  
EB  
C
1. FR-5=1.0 0.75 0.062 in  
WEITRON  
http://www.weitron.com.tw  
Rev.A 23-Jan-09  
1/3  

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