SMD Type
Transistors
NPN Transistors
2SC3838-HF
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High transition frequency.
● Small rbb’·Cc and high gain.
● Small NF.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
20
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
11
3
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
50
mA
P
C
200
150
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
20
11
3
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
E= 0
Ic= 1 mA,I =0
B
I
E
= 100μA, I
C= 0
I
CBO
EBO
V
V
CB= 20 V , I
EB= 3V , I
E
= 0
0.5
0.5
0.5
1.2
240
12
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=10 mA, I
B=5mA
V
C
=10 mA, I
B=5mA
hFE
V
V
CE= 10V, I
C
= 5mA
= 10 mA, f=31.8 MHz,
CE = 6 V, IC = 2 mA, f=500 MHz,
82
.
Collector-base time constant
rbb’ Cc
CB = 10 V, I
C
4
PS
dB
V
Noise figure
NF
3.5
Rg=50Ω
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
1.5
pF
f
C
= 10mA,f=500Mhz
1.4
3.2
GHz
■ Classification of hfe
Type
Range
Marking
2SC3838-P-HF 2SC3838-Q-HF 2SC3838-Y-HF
82-180 100-200 120-240
ADP ADQ ADY
F
F
F
1
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