Datasheet > 2SC3838-P

2SC3838-P

更新时间： 2024-11-19 01:07:43

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3838-P 数据手册

SMD Type

Transistors

NPN Transistors

2SC3838

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High transition frequency.

● Small rbb’·Cc and high gain.

● Small NF.

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

200

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

E= 0

Ic= 1 mA，I =0

= 100μA， I

C= 0

CBO

EBO

CB= 20 V , I

EB= 3V , I

= 0

0.5

1.2

240

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=10 mA, I

B=5mA

=10 mA, I

B=5mA

hFE

^CE= 10V, I

= 5mA

= 10 mA, f=31.8 MHz,

CE = 6 V, IC = 2 mA, f=500 MHz,

Collector-base time constant

rbb’ Cc

CB = 10 V, I

Noise figure

3.5

Rg=50Ω

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

1.5

= 10mA,f=500Mhz

1.4

3.2

GHz

■ Classification of hfe

Type

Range

Marking

2SC3838-P

82-180

2SC3838-Q

100-200

ADQ

2SC3838-Y

120-240

ADY

ADP

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