Datasheet > 2SC3834

2SC3834

更新时间： 2024-01-30 01:52:29

品牌	Logo	应用领域
THINKISEMI		晶体晶体管开关局域网
页数	文件大小	规格书
2页	805K
描述
50 Watt NPN Triple Diffused Planar Silicon Transistor

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2SC3834 数据手册

2SC3834

Pb Free Plating Product

50 Watt NPN Triple Diffused Planar Silicon Transistor

DESCRIPTION

Collector

Base

·Low Collector Saturation Voltage

: V_CE(sat)= 0.5V(Max)@ I_C=3A

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V (Min)

·Good Linearity of h_FE

Emitter

·Humidifier,DC-DC converter and general purpose.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220C) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS ^(Ta=25°C)

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

200

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

120

Collector Current (PULSE)

Collector Power Dissipation( Tc=25°C )

Junction Temperature

Storage Temperature

TSTG

150

°C

-55 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector Emitter Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

SYMBOL

BVCEO

ICBO

TEST CONDITIONS

Ic= 50mA

MIN TYP MAX UNIT

120

μA

VCB=200V, IE=0

VEB= 8V, Ic =0

VCE= 4V,Ic= 3A

100

220

0.5

IEBO

hFE

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

VCE(sat) Ic=3A ,IB=0.3A

VBE(sat)

f^T

Ic=3A ,IB=0.3A

VCE=12V,IE=-0.5mA,f=100MHz

VCB= 10V, IE= 0 A,f=1MHz

1.2

110

MHz

Output Capacitance

Cob

TYPE SWITCHING CHARACTERISTCS ^{(Common Emitter)}

Ton(μA) Tstg(μA) Tf (μA)

0.5(max)

VBB2(V)

IB2(A)

Vcc(V)

RL(Ω)

Ic (A)

VBB1(V)

IB1(A)

16.7

-5

0.3

-0.6

0.5(max) 3.0(max)

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http://www.thinkisemi.com/

Rev.07C

中文翻译

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