Datasheet > 2SC3834

2SC3834

更新时间： 2024-01-07 02:15:56

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描述
Silicon NPN Triple Diffused Planar Transistor

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2SC3834 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Silicon NPN Triple Diffused Planar Transistor

2SC3834

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

Symbol

V_CBO

200

V_CEO

V_EBO

I_C

120

8.0

7.0

3.0

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

Test Conditions

Min.

Typ.

Max. Unit

I_CBO

I_EBO

V_CB=200V, I_E=0

V_EB=8V, I_C=0

0.1

V_CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=50mA, I_B=0

V_CE=4V, I_C=0.3A

V_CE=4V, I_C=3.0A

120

100

220

0.5

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I_C=3.0A,I_B=300mA

V_CE=12V,I_C=500mA

MHz

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与2SC3834相关器件

型号	品牌	获取价格	描述	数据表
2SC3834_09	UTC	获取价格	SWITCH NPN TRANSISTOR
2SC3834_15	JMNIC	获取价格	Silicon NPN Power Transistor
2SC3834_2014	JMNIC	获取价格	Silicon NPN Power Transistor
2SC3834A	ISC	获取价格	Silicon NPN Power Transistors
2SC3834F	FOSHAN	获取价格	TO-220F
2SC3834G	ISC	获取价格	暂无描述
2SC3834G-T3P-T	UTC	获取价格	Power Bipolar Transistor,
2SC3834G-TA3-T	UTC	获取价格	SWITCH NPN TRANSISTOR
2SC3834G-TF3-T	UTC	获取价格	Power Bipolar Transistor,
2SC3834G-TND-R	UTC	获取价格	Power Bipolar Transistor,