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2SC3739 PDF预览

2SC3739

更新时间: 2024-10-01 12:32:55
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 61K
描述
High gain bandwidth product: fT=200MHz.Collector-base voltage VCBO 60 V

2SC3739 数据手册

  
Product specification  
2SC3739  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High gain bandwidth product: fT=200MHz.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
40  
V
5
V
Collector current  
500  
200  
mA  
mW  
Total power dissipation  
at 25 ambient temperature  
Junction temperature  
Storage temperature  
PT  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
VCB = 40V, IE=0  
Min  
75  
Typ  
150  
Max  
100  
100  
300  
Unit  
nA  
ICBO  
IEBO  
hFE  
VEB = 4V, IC=0  
nA  
VCE = 1V , IC = 150mA  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = 500mA , IB = 50mA  
VBE(sat) IC = 500mA , IB = 50mA  
0.25 0.75  
V
V
1.0  
400  
3.5  
1.2  
fT  
Cob  
ton  
VCE = 10V , IE = -20mA  
200  
MHz  
pF  
ns  
VCB = 10V , IE = 0 , f = 1.0MHz  
VCC = 30V ,  
8.0  
35  
Turn-on time  
Storage time  
tstg  
toff  
IC = 150mA ,  
225  
275  
ns  
Turn-off time  
IB1 = -IB2 = 15mA  
ns  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
B12  
B13  
B14  
75 150  
100 200  
150 300  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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