2SC3663-P-A

更新时间： 2024-11-27 12:59:23

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	112K
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中文翻译

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数据手册

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2SC3663-P-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3663

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES

PACKAGE DIMENSIONS (in mm)

•

Low-voltage, low-current, low-noise and high-gain

2.8 ± 0.2

1.5

NF = 3.0 dB TYP.

G^A= 3.5 dB TYP.

@VCE = 1 V, IC = 250 PA, f = 1.0 GHz

@V^CE= 1 V, I^C= 250 PA, f = 1.0 GHz

0.65⁺^–0⁰^.^.¹¹⁵

•

Ideal for battery drive of pagers, compact radio equipment,

cordless phones, etc.

•

Gold electrode gives high reliability.

Mini mold package, ideal for hybrid ICs.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 qC)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

V^CBO

V^CEO

V^EBO

I^C

RATING

UNIT

Marking

PIN CONNECTIONS

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

E: Emitter

B: Base

C: Collector

T^j

150

T^stg

ð65 to +150

Marking: R62

ELECTRICAL CHARACTERISTICS (T^A= 25 qC)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I^CBO

TEST CONDITIONS

V^CB= 5 V, I^E= 0

MIN.

TYP.

MAX.

0.1

UNIT

I^EBO

V^EB= 1 V, I^C= 0

0.1

h^FE

V^CE= 1 V, I^C= 250 PA, pulse

V^CE= 1 V, I^C= 1 mA

100

250

Gain Bandwidth Product

Insertion Power Gain

Maximum Available Gain

Noise Figure

f^T

GHz

°S^21e°

V^CE= 1 V, I^C= 1 mA, f = 1 GHz

V^CE= 1 V, I^C= 250 PA, f = 1.0 GHz

4.0

6.5

12.5

3.0

3.5

0.4

MAG

G^A

4.5

0.6

Associated Power Gain

Collector Capacitance

ob^Note

= 1 V, I = 0, f = 1.0 MHz

Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.

Document No. P10406EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

1997

12 3 4 5 6 7 8

中文翻译

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