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2SC3632Z PDF预览

2SC3632Z

更新时间: 2024-11-21 18:09:59
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
3页 1600K
描述
Package / Case : TO-252(D-PAK);Mounting Style : Through Hole;Power Rating : 2 W;Transistor Polarity : NPN;VCEO : 600 V;VCBO : 600 V;VEBO : 7 V;Max Collector Current : 1.0 A;DC Collector/Base Gain hfe Min : 5;DC Current Gain hFE Max : 120

2SC3632Z 数据手册

 浏览型号2SC3632Z的Datasheet PDF文件第2页浏览型号2SC3632Z的Datasheet PDF文件第3页 
2SC3632  
2SC3632Z  
Silicon NPN Power Transistor  
FEATURES  
1. High Collector-Emitter Voltage  
2. Low collector saturation voltage  
3. 100% avalanche tested  
TO-251  
TO-252  
Marking code˖˖2SC3632˄-Z˅  
2SC3632  
2SC3632  
Z
1˖Base 2˖Collector 3˖Emitter  
Maximum ratings(Ta=25ć unless otherwise noted)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current  
Value  
600  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
V
600  
V
7
V
1
2
A
Collector Power Dissipation  
Junction Temperature  
PC  
W
ć
ć
150  
TJ  
Storage Temperature  
-55~150  
Tstg  
Electrical Characteristics (Ta=25ć unless otherwise noted)  
Parameter  
Test Condition  
IC=100uA IE=0  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Min  
600  
600  
7
Max  
Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IC=1mA IB=0  
V
IE=-100uA IC=0  
VCB=600V IE=0  
VEB=7V IC=0  
V
10  
10  
uA  
uA  
Emitter Cutoff Current  
IEBO  
HFE(1)  
HFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=5V IC=100mA  
VCE=5V IC=500mA  
IC=400mA IB=80mA  
IC=400mA IB=80mA  
VCE=5V IE=-50mA  
120  
40  
5
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition frequency  
Turn-on time  
1
V
V
1.2  
10  
MHz  
ton  
0.5  
5
IC=0.5A,VCC=250V  
IB1=IB2-0.1A  
RL=500Ω  
Storage time  
us  
tstg  
Turn-off time  
toff  
0.5  
VCB=10V IE=0mA  
f=1MHz  
Collector output capacitance  
Cob  
30  
pF  
2022-09/17  
REV:B  

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