5秒后页面跳转
2SC3632-Z-M PDF预览

2SC3632-Z-M

更新时间: 2024-09-14 01:08:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 1368K
描述
NPN Transistors

2SC3632-Z-M 数据手册

 浏览型号2SC3632-Z-M的Datasheet PDF文件第2页浏览型号2SC3632-Z-M的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SC3632-Z  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
High voltage  
High speed  
0.127  
max  
+0.1  
-0.1  
0.80  
Complementary to 2SA1413-Z  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
600  
600  
7
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
I
C
1
A
Collector current -pulse  
Collector Power Dissipation  
Junction Temperature  
(Note.1)  
I
CP  
2
P
C
2
W
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Note.1 : Pulse :PW 10ms,Duty Cycle 50℅  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= 100 μAI = 0  
Ic= 1 mAI = 0  
Min  
600  
600  
7
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
= 100μAI  
CB= 600V , I  
EB= 7V , I =0  
C
= 0  
I
CBO  
EBO  
V
V
E
= 0  
10  
10  
1
uA  
V
Emitter cut-off current  
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
(Note.1)  
(Note.1)  
V
CE(sat)  
BE(sat)  
I
I
C
=400 mA, I  
B
=80mA  
=80mA  
0.35  
0.9  
55  
7
V
C=400 mA, I  
B
1.2  
120  
V
V
CE= 5V, I  
C
= 100mA  
30  
5
DC current gain  
(Note.1)  
hFE  
CE= 5, I = 500mA  
C
Turn-on time  
Storage time  
Turn-off time  
t
on  
stg  
off  
0.1  
4
0.5  
5
I
I
C
= 0.5 A, VCC= 250 V  
B1 = IB2 = 0.1 A  
us  
t
RL = 500 Ω  
t
0.2  
14  
30  
0.5  
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= 10V, I  
E= 0,f=1MHz  
pF  
f
CE= 5V, I = -50mA  
E
MHz  
Note.1 : Pulse :PW 350us,Duty Cycle 2℅  
Classification of hfe(1)  
Type  
2SC3632-Z-M  
2SC3632-Z-L  
2SC3632-Z-K  
Range  
30-60  
**M  
40-80  
**L  
60-120  
**K  
Marking  
1
www.kexin.com.cn  

与2SC3632-Z-M相关器件

型号 品牌 获取价格 描述 数据表
2SC3632-ZM-AZ RENESAS

获取价格

TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252
2SC3632-ZM-E1 NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, MP-3, 3 PIN
2SC3632-ZM-E2 NEC

获取价格

暂无描述
2SC3632-ZM-E2-AZ RENESAS

获取价格

TRANSISTOR,BJT,NPN,600V V(BR)CEO,1A I(C),TO-252AA
2SC3632-Z-T1K NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,
2SC3632-Z-T1L NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,
2SC3632-Z-T1M NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,
2SC3632-Z-T2 NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,
2SC3632-Z-T2K NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,
2SC3632-Z-T2M NEC

获取价格

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63,