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2SC3632-Z

更新时间: 2024-11-20 12:32:47
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关
页数 文件大小 规格书
1页 50K
描述
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V

2SC3632-Z 数据手册

  
Product specification  
2SC3632-Z  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High voltage VCEO=600V  
High speed tf 0.5ìs  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current *1  
Collector current  
Symbol  
VCBO  
VCES  
VEBO  
ICP  
Rating  
Unit  
V
600  
600  
V
7
V
2
A
IC  
1
A
PT  
2
W
Total power dissipation  
Junction temperature  
Storage temperature  
Ta= 25 *2  
Tj  
150  
Tstg  
-55 to +150  
*1 pw 10ms,Duty cycle 50%  
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm  
Electrical Characteristics Ta = 25  
Parameter  
collecotr cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
Unit  
ìA  
VCB=600V,IE=0  
10  
10  
Emitter cutoff current  
DC Current Gain  
IEBO  
VEB=7V,IC=0  
ìA  
VCE=5V,IC=100mA  
VCE=5V,IC=100mA  
IC=400mA,IB=80mA  
IC=400mA,IB=80mA  
VCE=5V,IE=-50mA  
VCB=10V,IE=0A,f=1MHz  
30  
5
55  
7
120  
hFE  
Collector saturation voltage  
Base to saturation voltage  
Gain Bandwidth Product  
Output capacitance  
Turn-on time  
VCE(sat)  
VBE(sat)  
fT  
0.35  
0.9  
30  
1.0  
1.2  
V
V
MHz  
pF  
ìs  
cob  
ton  
14  
0.1  
4.0  
0.2  
0.5  
5.0  
0.5  
IC=0.5A,RL=500Ù  
IB1=-IB2=0.1A  
Storage time  
tstg  
ìs  
Fall time  
tf  
VCC=250V  
ìs  
hFE Classification  
Marking  
hFE  
M
L
K
30 to 60  
40 to 80  
60 to 120  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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