Datasheet > 2SC3632

2SC3632

更新时间： 2024-06-27 12:12:58

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	1882K
描述
Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 2 W;Transistor Polarity : NPN;VCEO : 600 V;VCBO : 600 V;VEBO : 7 V;Max Collector Current : 1.0 A;DC Collector/Base Gain hfe Min : 5;DC Current Gain hFE Max : 120

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2SC3632 数据手册

2SC3632

Silicon NPN Power Transistor

FEATURES

1. High Collector-Emitter Voltage

2. Low collector saturation voltage

3. 100% avalanche tested

Marking code˖˖2SC3632

TO-251

1˖Base 2˖Collector 3˖Emitter

Maximum ratings(Ta=25ć unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Value

600

Symbol

V^CBO

V^CEO

V^EBO

I^C

Unit

600

Collector Power Dissipation

Junction Temperature

P^C

150

T^J

Storage Temperature

-55~150

Tstg

Electrical Characteristics (Ta=25ć unless otherwise noted)

Parameter

Test Condition

IC=100uA IE=0

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Min

600

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

IC=1mA IB=0

IE=-100uA IC=0

VCB=600V IE=0

VEB=7V IC=0

Emitter Cutoff Current

I^EBO

HFE(1)

HFE(2)

V^CE(sat)

V^BE(sat)

f^T

VCE=5V IC=100mA

VCE=5V IC=500mA

IC=400mA IB=80mA

VCE=5V IE=-50mA

120

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition frequency

Turn-on time

1.2

MHz

ton

0.5

IC=0.5A,VCC=250V

IB1=IB2-0.1A

RL=500Ω

Storage time

tstg

Turn-off time

toff

0.5

VCB=10V IE=0mA

f=1MHz

Collector output capacitance

Cob

2022-09/17

REV:B

12 3 4 5

中文翻译

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