Datasheet > 2SC3583(NE68133)

2SC3583(NE68133)

更新时间： 2024-11-25 23:20:15

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	94K
描述
Discrete

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3583(NE68133) 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3583

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3583 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

1.2 dB TYP.

13 dB TYP.

@f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

250

I^EBO

V^EB= 1 V, I^E= 0

h^FE*

f^T

100

V^CE= 8 V, I^C= 20 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

GHz

C^re**

0.35

0.9

V^CB= 10 V, I^E= 0, f = 1.0 MHz

S^21e

V^CE= 8 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 8 V, I^E= 7 mA, f = 1.0 GHz

MAG

1.2

2.5

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R33/Q *

R33

R34/R *

R34

R35/S *

R35

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10360EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC3583(NE68133)相关器件

型号	品牌	获取价格	描述	数据表
2SC3583-A	NEC	获取价格	暂无描述
2SC3583Q	NEC	获取价格	BJT
2SC3583-Q	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-Q	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3583-Q-A	NEC	获取价格	暂无描述
2SC3583R	NEC	获取价格	BJT
2SC3583-R	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583R33	NEC	获取价格	BJT
2SC3583-R33	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-R33-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil