Datasheet > 2SC3566

2SC3566

更新时间： 2024-11-06 05:57:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	232K
描述
Silicon NPN Power Transistor

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2SC3566 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3566

DESCRIPTION

·Low Collector Saturation Voltage

·Fast Switching Speed

APPLICATIONS

·Designed for high-speed switching, and is ideal for use

as a driver in devices such as switching reglators,DC/DC

converters, and high frequency power amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

2.5

Collector Power Dissipation

@ T_a=25℃

1.5

P_C

Total Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SC3566相关器件

型号	品牌	获取价格	描述	数据表
2SC3566K	ISC	获取价格	Transistor
2SC3566L	ISC	获取价格	Transistor
2SC3566M	ISC	获取价格	Transistor
2SC3567	NEC	获取价格	NPN SILICON POWER TRANSISTOR
2SC3567K	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 3A I(C) \| SOT-186VAR
2SC3567-K	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3567L	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 3A I(C) \| SOT-186VAR
2SC3567-L	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3567M	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 3A I(C) \| SOT-186VAR
2SC3567-M	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,