2SC3519AO

更新时间： 2024-10-02 13:04:15

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管放大器局域网
页数	文件大小	规格书
1页	27K
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数据手册

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2SC3519AO 数据手册

LAP T 2 S C3 5 1 9 /3 5 1 9 A

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)

Application : Audio and General Purpose

■Electrical Characteristics

■Absolute maximum ratings (Ta=25°C)

(Ta=25°C)

External Dimensions MT-100(TO3P)

Symbol 2SC3519 2SC3519A

Unit

2SC3519 2SC3519A

Symbol

Conditions

Unit

±0.2

4.8

±0.4

15.6

VCBO

VCEO

VEBO

160

180

±0.1

2.0

100max

9.6

µA

I^CBO

V^CB=

160

180

IEBO

V^EB=5V

100max

µA

±0.1

ø3.2

160min

50min

180min

V(BR)CEO

hFE

I^C=25mA

V^CE=4V, IC=5A

I^C=5A, IB=0.5A

V^CE=12V, IE=–2A

V^CB=10V, f=1MHz

130(Tc=25°C)

150

°C

VCE(sat)

2.0max

50typ

MHz

+0.2

-0.1

+0.2

-0.1

Tstg

–55 to +150

COB

250typ

1.05

0.65

1.4

h^FERank O(50 to 100), P(70 to 140), Y(90 to 180)

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Type No.

V^CC

(V)

(Ω)

I^C

(A)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

ton

(µs)

tstg

(µs)

VBB1

(V)

b. Lot No.

–5

–1

0.2typ

1.3typ

0.45typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=10A

50mA

I^B=20mA

0.2

0.4

0.6

0.8

1.0

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

300

125˚C

100

Typ

25˚C

–30˚C

0.5

0.02

0.1

100

Time t(ms)

1000 2000

0.1

0.5

10 15

0.1

0.5

10 15

Collector Current IC(A)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

130

100

Typ

Without Heatsink

Natural Cooling

0.5

1.2SC3519

2.2SC3519A

0.1

Without Heatsink

3.5

0.05

100

200

–0.02

–0.1

–1

–5 –10

100

125

150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

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