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2SC3519AO PDF预览

2SC3519AO

更新时间: 2024-11-23 13:04:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 230K
描述
暂无描述

2SC3519AO 数据手册

 浏览型号2SC3519AO的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2SC3519/A  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
V(BR)CEO= 160V(Min)-2SC3519  
= 180V(Min)-2SC3519A  
·Good Linearity of hFE  
·Complement to Type 2SA1386/A  
APPLICATIONS  
·Designed for audio and general purpose applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
160  
18
160  
180  
5
UNIT  
2SC3519  
2SC3519A  
2SC3519  
2SC3519A  
Collector-Base  
VCBO  
V
Voltage  
Collector-Emtter  
Voltage  
VCEO  
V
VEBO  
Emitter-Base Voltage  
V
A
IC  
Collector Current-Continuous  
Base Current-Continuous  
15  
IB  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
130  
150  
-55~150  
W
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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