LAP T 2 S C3 5 1 9 /3 5 1 9 A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
Application : Audio and General Purpose
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
(Ta=25°C)
External Dimensions MT-100(TO3P)
Symbol 2SC3519 2SC3519A
Unit
2SC3519 2SC3519A
Symbol
Conditions
Unit
±0.2
4.8
±0.4
15.6
VCBO
VCEO
VEBO
IC
160
160
180
180
±0.1
2.0
V
V
100max
9.6
µA
V
ICBO
VCB=
160
180
5
15
4
V
IEBO
VEB=5V
100max
µA
V
a
±0.1
ø3.2
160min
50min
180min
A
V(BR)CEO
hFE
IC=25mA
b
IB
A
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
PC
130(Tc=25°C)
150
W
°C
°C
VCE(sat)
fT
2.0max
50typ
V
MHz
pF
2
3
Tj
+0.2
-0.1
+0.2
-0.1
Tstg
–55 to +150
COB
250typ
1.05
0.65
1.4
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
±0.1
±0.1
5.45
5.45
B
C
E
■Typical Switching Characteristics (Common Emitter)
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
VBB1
(V)
b. Lot No.
40
10
–5
1
–1
0.2typ
1.3typ
4
10
0.45typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
15
15
10
3
2
10
IC=10A
1
5
5
0
50mA
5A
IB=20mA
0
0
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
300
300
125˚C
100
50
100
1
Typ
25˚C
–30˚C
50
0.5
10
0.02
10
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 15
0.1
0.5
1
5
10 15
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
40
130
100
80
60
40
20
0
10
5
Typ
1
Without Heatsink
Natural Cooling
0.5
50
1.2SC3519
2.2SC3519A
0.1
Without Heatsink
1
2
3.5
0
0.05
5
10
50
100
200
–0.02
–0.1
–1
–5 –10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
66