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2SC3507 PDF预览

2SC3507

更新时间: 2024-10-02 06:18:59
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 143K
描述
Silicon NPN Power Transistors

2SC3507 数据手册

 浏览型号2SC3507的Datasheet PDF文件第2页浏览型号2SC3507的Datasheet PDF文件第3页浏览型号2SC3507的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3507  
DESCRIPTION  
·With TO-3PFa package  
·High-speed switching  
·High collector-base voltage VCBO  
·Satisfactory linearity of forward  
current transfer ratio hFE  
APPLICATIONS  
·For high-speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
Open emitter  
Open base  
1000  
V
V
V
A
A
A
800  
Open collector  
7
5
ICM  
Collector current-peak  
Base current  
10  
IB  
3
80  
TC=25ꢀ  
Ta=25ꢀ  
PC  
Collector power dissipation  
W
3
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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