SMD Type
Transistors
NPN Transistors
2SC3444
■ Features
1.70 0.1
● High Voltage
● High collector current
● Low collector to emitter saturation voltage
● High collector dissipation Pc=500mW
0.42 0.1
0.46 0.1
● Small package for mounting
● Complementary to 2SA1364
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
60
V
60
6
Collector Current - Continuous
Peak Collector Current
I
C
1
2
A
mW
℃
I
CM
Collector Power Dissipation
Junction Temperature
P
C
500
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
60
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100uA, I
Ic= 2mA, RBE= ∞
= 100uA, I = 0
CB= 50V , I = 0
EB= 4V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.2
0.2
0.3
1.2
300
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=500mA, I
B
=25mA
=25mA
0.11
V
C
=500mA, I
B
hFE
V
V
V
CE= 4V, I
CB= 10V, I
CE= 2V, I = 10mA
C= 100mA
55
Collector output capacitance
Transition frequency
C
ob
T
E= 0,f=1MHz
14
80
pF
f
C
MHz
■ Classification of hfe
Type
Range
Marking
2SC3444-C
55-110
DC
2SC3444-D
90-180
DD
2SC3444-E
150-300
DE
1
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