Datasheet > 2SC3444

2SC3444

更新时间： 2024-11-01 06:24:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	52K
描述
Small Signal Transistor

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中文翻译

获取价格

数据手册

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2SC3444 数据手册

SMD Type

Transistors

Small Signal Transistor

2SC3444

Features

High voltage VCEO=60V.

High collector current (Ic=1A).

High collector dissipation Pc=500mW.

Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA).

Small package for mounting.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^EBO

V^CEO

I^CM

I^C

Emitter-base voltage

Collector-emitter voltage

Peak collector current

Collector current

500

P^C

Collector dissipation (Ta=25

Jumction temperature

Storage temperature

)

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Colllector-base breakdown voltage

Emitter-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

V^(BR)CBOIC=10ìA,IE=0

V^(BR)EBOIE=10ìA,IC=0

V^(BR)CEO

IC=2mA,RBE=

I^CBO

VCB=50V,IE=0

VEB=4V,IC=0

0.2

300

0.3

ìA

Emitter cutoff current

I^EBO

DC current gain

h^FE

VCE=4V,IC=100mA

Collector-emitter saturation voltage

Gain bandwidth product

V^CE(sat)IC=500mA,IB=25mA

0.11

f^T

VCE=2V,IE=-10mA

MHz

Collector output capacitance

C^ob

VCB=10V,IE=0,f=1MHz

hFE Classification

Marking

hFE

150 300

55 110

90 180

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