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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2SC3440_10 | ISAHAYA |
获取价格 |
HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
|
| 2SC3440-12-1E | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
| 2SC3440-12-1F | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
| 2SC3440-12-1G | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
| 2SC3440E | ISAHAYA |
获取价格 |
Transistor |
|
| 2SC3440F | ISAHAYA |
获取价格 |
Transistor |
|
| 2SC3440G | ISAHAYA |
获取价格 |
Transistor |
|
| 2SC3440-T12-1E | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
| 2SC3440-T12-1F | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
| 2SC3440-T12-1G | MITSUBISHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
|
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