Datasheet > 2SC3405

2SC3405

更新时间： 2024-09-23 12:47:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	43K
描述
NPN Silicon Triple Diffused Transistor

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中文翻译

获取价格

数据手册

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2SC3405 数据手册

SMD Type

Transistors

NPN Silicon Triple Diffused Transistor

2SC3405

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Excellent Switching Times

t^r=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A

High colletor Breakdown Voltage: VCEO=800V

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

900

800

Unit

0.8

1.5

0.2

I^cp

I^B

Total Power dissipation Ta = 25

T^C= 25

T^j

Junction temperature

Storage temperature

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

collector cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

ìA

VCB=800V,IE=0

100

emitter cutoff current

I^EBO

VEB=8V,IC=0

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

V^(BR)EBO

V^(BR)CEO

IE=1mA,IC=0

900

800

IC=10mA,IB=0

V^CE=5V,IC=1mA

V^CE=5V,IC=0.3A

IC=0.3A,IB=0.06A

DC current Gain

h^FE

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

V^CE(sat)

V^BE(sat)

0.5

1.2

Switching time turn-0n time

Switching storage time

Switching fall time

tstg

4.0

ìs

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