是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 15 A |
配置: | Single | 最小直流电流增益 (hFE): | 10 |
JESD-609代码: | e0 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 120 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3322 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SC3322 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC3322 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SC3324 | KEXIN |
获取价格 |
Silicon NPN Epitaxial | |
2SC3324 | TOSHIBA |
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NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) | |
2SC3324 | TYSEMI |
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High voltageVCEO=120V High hFE.hFE=200 to 700 Small package. | |
2SC3324_07 | TOSHIBA |
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Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications | |
2SC3324BL | ETC |
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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SC-59 | |
2SC3324-BL | TOSHIBA |
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Audio Frequency Low Noise Amplifier Applications | |
2SC3324BLTE85L | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sm |