Datasheet > 2SC3300

2SC3300

更新时间： 2024-02-10 04:24:41

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	217K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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2SC3300 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3300

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 50V(Min)

·Low Collector Saturation Voltage-

: V_CE(sat)= 0.5V(Max)@ I_C= 5A

APPLICATIONS

·Designed for DC-DC converter, emergency lighting

inverter and general purpose applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

100

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CP

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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